The depletion layer in the P-N junction region is caused by
A
drift of holes
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B
diffusion of charge carriers
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C
migration of impurity ions
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D
drift of electrons
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Solution
The correct option is B diffusion of charge carriers Due to the large concentration of electrons in N-side and holes in P-side, they diffuses from their own side to other side when giving biasing. Hence depletion region produces.