Question

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

• A. crystal structure.
• B. variation of the number of charge carriers with temperature.
• C. type of bonding.
• D. variation of scattering mechanism with temperature.

Answer 1

The correct option is B variation of the number of charge carriers with temperature.

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the variation of the number of charge carriers with temperature.