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Question

The difference in the variation of resistance with temperature in a metal and a semiconductorarises essentially due to the difference in the

A
crystal structure
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B
variation of the number of charge carries with temperature
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C
type of bonding
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D
variation for scattering mechanism with temperature.
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Solution

The correct option is B variation of the number of charge carries with temperature
As temperature changes in a solid metal or semiconductor, there is a transfer of electrons between conduction band and valence band in metals, and that between conduction band or valence band, and intrinsic carrier level in semiconductors.
This variation of number of charge carriers with temperature is responsible for variation of resistance in a metal and a semiconductor.

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