The diffusion current in a P-N junction is-

From the N-side to the P-side

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From the P-side to the N-side

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From the N-side to the P-side if the junction is forward-biased and in the opposite direction if it is reverse biased

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From the P-side to the N-side if the junction is forward-biased and in the opposite direction if it is reverse biased

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Solution

The correct option is B
From the P-side to the N-side

Diffusion current is due to concentration gradient of charge carriers across the junction and it is due to majority charge carriers. So it means, diffusion current is due to movement of holes from p side to n side & e^-1 movement of holes from P side to n side

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Similar questions

Q. The diffusion current in a p-n junction is
(a) from the n-side ot the p-side
(b) from the p-side to the n-side
(c) from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse-biased
(d) from the p-side to the n-side if the junction is forward and in the opposite direction if it is reverse-biased.

The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?

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(b) if the junction is reverse-biased
(c) if the junction is unbiased
(d) in no case.

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Q. The potential barrier existing across an unbiased

p - n

junction is

0.2 V

. What minimum kinetic energy a hole should have to diffuse from the

p -

side to the

n -

side if the junction is forward biased with

0.1 V

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