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Question
The figure shows the high- frequency capacitance-voltage (C-V) characteristic of a Metal/SiO2/silicon (MOS) capacitor having an area of 1×10−4cm2. Assume that the permittivities ϵ0ϵr of silicon and SiO2 are 1×1012F/cm and 3.5×10−13F/cm respectively.
The gate oxide thickness in the MOS capacitor is
The figure shows the high- frequency capacitance-voltage (C-V) characteristic of a Metal/SiO2/silicon (MOS) capacitor having an area of 1×10−4cm2. Assume that the permittivities ϵ0ϵr of silicon and SiO2 are 1×1012F/cm and 3.5×10−13F/cm respectively.
The gate oxide thickness in the MOS capacitor is
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Solution
The correct option is D 50 nm
Ans : (a)
C=εAd
d=εAC=3.5×10−13×1×10−4×10−47×10−12×10−2
=5×10−8m=50nm
Ans : (a)
C=εAd
d=εAC=3.5×10−13×1×10−4×10−47×10−12×10−2
=5×10−8m=50nm
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