Question

The number of minority carriers crossing the junction of a diode depends primarily on the :

• A. concentration of doping impurities
• B. magnitude of potential barrier
• C. magnitude of the forward bias voltage
• D. rate of thermal generation of electron-hole pair

Answer 1

Answer: (D)

rate of thermal generation of electron-hole pair

The minority carriers in a diode are the ‘Holes’ and ‘Free Electrons’ for the $\text{p -}$side and $\text{n -}$side, respectively. The minority charge carrier’s movement depends on the thermal generation rate at the junction inside the diode. Which further depends on the rate of thermal generation of electron-hole pair.

So, the correct option is (D)