The part of a transistor which is heavily doped to produce a large number of majority carries is

base

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emitter

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collector

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none of these

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Solution

The correct option is A emitter
The emitter is highly doped and used to produce large no. Of charge carriers.

In case of npn transistor it produces holes as majority charge carriers.
And in case of pnp it produces electrons as majority charge carriers.

Option $B$ is the correct answer.

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The part of a transistor which is heavily doped to produce a large number of majority carries is

The correct option is A emitterThe emitter is highly doped and used to produce large no. Of charge carriers.In case of npn transistor it produces holes as majority charge carriers.And in case of pnp it produces electrons as majority charge carriers.Option B is the correct answer.

The correct option is A emitter
The emitter is highly doped and used to produce large no. Of charge carriers.

In case of npn transistor it produces holes as majority charge carriers.
And in case of pnp it produces electrons as majority charge carriers.

Option $B$ is the correct answer.