The part of a trasistor which is heavily doped to produce large number of majority carriers is :

emitter

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base

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collector

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can be any of the above three

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Solution

The correct option is B emitter
In transistors emitter is heavily doped as compared to base and collector, in order to produce large number of majority carriers.

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The part of a trasistor which is heavily doped to produce large number of majority carriers is :

The correct option is B emitterIn transistors emitter is heavily doped as compared to base and collector, in order to produce large number of majority carriers.

The correct option is B emitter
In transistors emitter is heavily doped as compared to base and collector, in order to produce large number of majority carriers.