The potential barrier of a p-n junction increases when

the concentration of doping increases

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the concentration of doping decreases

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the recombination of electrons and holes increases

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the recombination of electrons and holes decreases

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Solution

The correct options are
A the recombination of electrons and holes increases
B the concentration of doping increases
If the concentration of doping is increased, number of charge carriers also increases. Due to increased number of charge carriers, amount of diffusion increases and in turn, recombination of holes and electrons increases. Hence, we get a larger region depleted by charge carriers i.e. potential barrier increases.

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Similar questions

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