Question

The potential barrier of a silicon junction diode is 0.7V. If the thickness of the depletion layer in it is ${10}^{-4}cm$. Then the intensity of electric field across the junction is

• A. $7\times {10}^3\frac{V}{m}$
• B. $7\times {10}^5\frac{V}{m}$
• C. $7\times {10}^{-5}\frac{V}{m}$
• D. None of these

Answer 1

The correct option is A $7\times {10}^3\frac{V}{m}$

$E=\frac{V}{d}=\frac{0.7}{{10}^{-4}}=7\times {10}^3\frac{V}{m}$