The potential barrier of a silicon junction diode is 0.7V. If the thickness of the depletion layer in it is 10−4cm. Then the intensity of electric field across the junction is
A
7×103Vm
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B
7×105Vm
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C
7×10−5Vm
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D
None of these
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Solution
The correct option is A7×103Vm E=Vd=0.710−4=7×103Vm−1