The silicon sample with unit cross-sectional areas shown below is in thermal equilibrium- The following information is given- T- 300 K- electronic charge - 1-6 - 10-19 C- thermal voltage -26 mV and electron mobility - 1350 cm2-V-sThe magnitude of the electron drift current density at x- 0-5 - m is

Ans : (a) J=σ E , σ =nqμ _n=N_D qμ _n J=N_Dqμ _nE J=10^16× (1.6× 10^ 19)(1350)(10× 10^3) J=2.16× 10^4A/cm^2 ...

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Drift and Diffusion

The silicon s...

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The silicon sample with unit cross-sectional areas shown below is in thermal equilibrium. The following information is given: $T = 300 K$ , electronic charge $= 1.6 \times 10^{- 19} C$ , thermal voltage $= 26 m V$ and electron mobility $= 1350 c m^{2} / V - s$

The magnitude of the electron drift current density at $x = 0.5 μ m$ is

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0.5 Ω - c m

(μ_{n})

1250 c m^{2} / V - s e c

1.6 \times 10^{- 19}

(N_{D})

0.001 c m^{2}, μ_{n} = 800 c m^{2} / (V - s)

I_{c} (i n m A)

V_{T} = 26 m V

q = 1.6 \times 10^{- 19} C)

0.1 c m

100 μ m^{2}

5 \times 10^{20} / m^{3}

0.13 m^{2} / V - s

300 K

1.6 \times 10^{- 19}

300 K

26 m V

Consider a silicon semiconductor bar shown below:

The electron current density in the above semiconductor is Assume mobility of electron is 2500 c m^{2} / V - s e c

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