The temperature dependence of resistances of Cu and undoped Si in the temperature range $300 - 400$ K, is best described by.

Linear increase for Cu, linear increase for Si.

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Linear increase for Cu, exponential increase for Si.

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Linear increase for Cu, exponential decrease for Si.

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Linear decrease for Cu, linear decrease for si.

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Solution

The correct option is D Linear increase for Cu, exponential decrease for Si.
Resistance of a conductor increases linearly with temperature.
$R = R_{o} (1 + α Δ T)$

Resistance of semiconductor decreases with temperature.
Conductivity, $σ = {C e}^{- E_{G} / 2 k T}$

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Similar questions

The temperature dependence of resistances of Cu and undoped Si in the temperature range 300-400K, is best described by:

300 K to 400 K

300 - 400 K

For the cell:

${T l}_{(s)}$ / ${T l}^{+}$ (0.001M)// ${C u}^{+ 2}$ (0.1M)/ ${C u}_{(s)}$ :

$E_{c e l l}$ = 0.83V at 298K, The cell potential can be increased by

T l_{(s)} | T l^{+} (0.001 M) | | C u^{+ 2} (0.1 M) | C u_{(s)}

E_{c e l l} = 0.83 V

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