There photo dlodes D1,D2 and D3 are made of semiconductor having band gap 2.5 eV,2 eV and 3 eV respectively. Which one will be able to detect light of wavelength 6000 Ao?
Given that,
Band gap of D1=2.5eV
Band gap of D2=2eV
Band gap of D3=3eV
Wave length λ=6000∘A
Now, the wave length for 2.5 eV
λ1=hcE
λ1=6.6×10−34×3×1082.5×1.6×10−19
λ1=4.95×10−7m
Now, for 2 eV
λ2=hcE
λ2=6.6×10−34×3×1082×1.6×10−19
λ2=6.2×10−7m
Now, for 3 eV
λ3=hcE
λ3=6.6×10−34×3×1083×1.6×10−19
λ3=4.13×10−7m
For detection of optical signal the wave length of incident energy radiation must be greater.
So, only D2can detect the radiation