The correct option is C It will change the electron and hole carrier concentrations of the semiconductor
The conduction by pure substances such as silicon and germanium exhibiting electrical conductivity are called intrinsic semiconductors.
The conductivity of pure silicon and germanium is too low at room temperature, so, to increase the conductivity the process doping comes.
The intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties.
Doping may be carried out using electron rich impurities and electron deficient impurity.
Doping with electron rich impurity will increase the electron concentration and doping with electron deficient impurity will increase the hole carrier concentration.
Thus, option (c) is correct.