Current increases in the range of nanoamps (silicon) or microamps (ger) with regard to reverse voltage in a reverse characteristic of PN-junction.
When voltage breakdown occurs, the current increases, despite the fact that voltage remains constant.
Reverse saturation current is the name given to this current.
The reverse saturation current, also known as the saturation current (or scale current), is the portion of the reverse current in a semiconductor diode induced by minority carrier migration from the neutral to the depletion zones. The reverse voltage has essentially no effect on this current.
The reverse saturation current is the part of the reverse current in a semiconductor diode which is caused by the diffusion of minority carriers from the neutral regions to the depletion region.
The following graph shows the reverse saturation current.
Reverse saturation current is the term for the negative current produced by a reverse bias.