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Standard XII

Physics

P-N Junction

When an exter...

Question

When an external voltage ( $V$ ) is applied across the diode in reverse bias with a barrier potential of $V_{o}$ , the effect barrier height under reverse bias is

V_{o} + V

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V_{o} - V

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V - V_{o}

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None of these

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Solution

The correct option is A $V_{o} + V$
When a reverse bias voltage (V) is applied externally across the diode, and the barrier potential is $V_{o}$ . The potential difference adds to the barrier potential. The effective barrier potential increases to $(V_{o} + V)$ .

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Similar questions

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Draw V-I characteristics of a p-n junction diode. Answer the following questions, giving reasons :
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Name any semiconductor device which operates under the reverse bias in the breakdown region.

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When an external voltage (V) is applied across the diode in reverse bias with a barrier potential of Vo, the effect barrier height under reverse bias is

The correct option is A Vo+VWhen a reverse bias voltage (V) is applied externally across the diode, and the barrier potential is Vo. The potential difference adds to the barrier potential. The effective barrier potential increases to (Vo+V).

When an external voltage ( $V$ ) is applied across the diode in reverse bias with a barrier potential of $V_{o}$ , the effect barrier height under reverse bias is

The correct option is A $V_{o} + V$
When a reverse bias voltage (V) is applied externally across the diode, and the barrier potential is $V_{o}$ . The potential difference adds to the barrier potential. The effective barrier potential increases to $(V_{o} + V)$ .