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Drain and Transfer Characteristics

When the gate...

Question

When the gate-to-source voltage ( $V_{G S})$ of a MOSFET withthresholdvoltage of $400 m V$ , working in saturation is $900 m V$ , the drain current is observed to be $1 m A$ . Neglecting the channelwidth modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied $V_{G S}$ of $1400 m V$ is

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Solution

Ans : (d)

$I_{D} = K (V_{G S} - V_{T})^{2}$
$1 m A = K (900 - 400)^{2}$
$K = \frac{1 m A / v^{2}}{10^{4} \times 25}$
When $V_{G S} = 1400 V$
$I_{D} = K (V_{G S - V_{T}})^{2}$
$= \frac{1 m A / v^{2}}{25 \times 10^{4} \times V^{2}} (1400 - 400)^{2} V^{2}$
$I_{D} = \frac{1 m A \times 100}{25 \times 10^{4}} = 4 m A$

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