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Question
Which of the following is/are correct when an intrinsic semiconductor is doped with a donor impurity:
Which of the following is/are correct when an intrinsic semiconductor is doped with a donor impurity:
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Solution
The correct option is C The electron concentration will increase.
The intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties is called dopping.
Doping can be carried out using electron rich impurities and electron deficient impurity. Both will increase the conductivity of semiconductors.
When a semiconductor is doped with donar impurity, it increases the electron concentration and there will be no formation of holes.
n-type semiconductor conduct electricity through normal electron conduction mechanism.
When a semiconductor is doped with electron deficient impurity, it increases the hole concentration.
p-type semiconductors conduct electricity through positive hole conduction mechanism.
The intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties is called dopping.
Doping can be carried out using electron rich impurities and electron deficient impurity. Both will increase the conductivity of semiconductors.
When a semiconductor is doped with donar impurity, it increases the electron concentration and there will be no formation of holes.
n-type semiconductor conduct electricity through normal electron conduction mechanism.
When a semiconductor is doped with electron deficient impurity, it increases the hole concentration.
p-type semiconductors conduct electricity through positive hole conduction mechanism.
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