The correct option is A Silicon carbide
The reaction between SiC powder and H2O has been studied at 4000−8000C under 10 and 100MPa. Silicon carbide reacted with H2O to yield amorphous SiO2 and CH4 by the reaction,
SiC+2H2O⟶SiO2+CH4 above 5000C.
The rate of oxidation of silicon carbide was studied at different partial pressures of water vapour. The diffusion‐rate constant was found to vary with the logarithm of the partial pressure of water vapour according to the theory of thin‐film oxidation as proposed by Engell and Hauffe. The products of oxidation were cristobalite and tridymite, depending on the temperature. The diffusing species appeared to be the same in the presence of partial pressures of water vapour and in the presence of partial pressures of oxygen.