Question

Which of the following statements is/are incorrect regarding defects in solid?

• A. $AgBr\left(s\right)$ crystals show both schottky and frenkel defects
• B. Impurity defect by doping of arsenic in silicon yields 'P' type of semiconductor
• C. Doping in crystal introduces dislocation defects
• D. The metal deficient defect can occur with extra anions present in the interstitial voids

Answer 1

Answer: (B), (C), (D)

The correct options are
B Impurity defect by doping of arsenic in silicon yields 'P' type of semiconductor
C Doping in crystal introduces dislocation defects
D The metal deficient defect can occur with extra anions present in the interstitial voids

(A) $AgBr\left(s\right)$ crystals show both schottky and frenkel defects
(B) Impurity defect by doping Arsenic in silicon yields 'n' type semiconductor because silicon is a tetravalent and arsenic is a pentavalent metal.
(C) Doping in crystal introduces electronic - defect because doping is done by electron rich or electron deficient impurities.
(D) The metal deficient defect cannot occurs with extra anion present in the interstitial voids because anion is bigger in size.