Question

Which of the following statements is correct about the conduction of electricity in pure crystal of silicon at room temperature?

• A. The conduction is due to electrons present in fully occupied lowest energy states.
• B. The conduction is due to only some electrons capable of leaving the bonds at room temperature.
• C. The conduction is only due to the holes formed from the release of electrons.
• D. The conduction is due to the movement of both the electrons released and holes formed.

Answer 1

Answer: (D)

The conduction is due to the movement of both the electrons released and holes formed.

In semiconductor two types of the semiconductor are present. They are an intrinsic and extrinsic semiconductor. A pure silicon crystal is an example of an intrinsic semiconductor.

The conduction in the intrinsic semiconductor is due to the moving of electrons from valence bond to conduction bond by means of thermal energy. Due to the thermal energy the $Si-Si$ bond breaks and creates electron deficiency which is also called a hole. So, both the holes and electrons released to account for the conduction of electricity.