The correct option is B n will increase, but vd will decrease.
As we increase the temperature, additional electron-hole pairs are created in the semiconductor.
As a result, the number of charge carriers (n) increases.
Now, drift velocity (vd) is given by
vd=eEτm
As temperature↑ relaxation time (τ)↓∴vd↑
Hence, option (B) is correct.