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Mechanism of Formation of P-N Junction

An ideal cell...

Question

An ideal cell of emf $30 V$ is connected across three resistance of $10 Ω$ each and an ideal diode as shown. Then the magnitude of potential difference $V_{A B}$ across at $10 Ω$ resistor as shown is:

A

10 V

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B

20 V

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C

30 V

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D

None of these

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Solution

The correct option is A $10 V$
Diode is in forward biasing hence the circuit can be redrawn as follows :
$V_{A B} = \frac{30}{(10 + 5)} \times 5 = 10 V$

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