The correct option is A 50.50 mW
Given,μnCoxWL=1.5×10−3A/V2VT=0.65VVGs=4VVDS=6Vpower diipation in the MOSFET is,P=VDS×IDSWhere, IDS is drain to source saturation current.Since the MOSFET is operating in saturation region,IDS=12μn CoxWL(VGS−VT)2IDS=8.42×10−3Apower dissipation, P=6×8.42×10−3∴P=50.50 mW