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Question

An ideal nchannel MOSFET has the following parameters,threshold voltage VT=0.65V and oxide thickness is 0.4nm.It is found that the MOSFET operating in saturationregion with VDS=6V. Then the power dissipation in theMOSFET with VGS=4 V isμnCaxWL=1.5×103A/V2,

A
50.50 mW
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B
37.65 mW
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C
25.25 mW
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D
75.50 mW
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