Application of a forward bias to a p-n junction
a) widens the depletion zone
b) increases the potential difference across the depletion zone
c) increases the number of donors on the n side
d) decreases the electric field in the depletion zone

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Solution

Option (c) is correct. A number of donors are more because electrons from -ve terminal of the cell push (enters) the n-side and decreases the number of uncompensated pentavalent ion due to which potential barrier is reduced.

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When forward bias is applied to a p-n junction, then what happens to the potential barrier $V_{B}$ , and the width of charge depletion region?

In a forward biased p – n junction diode, the potential barrier in the depletion region is of the form

0.4 V

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(A)

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