Assuming the transistor to be in active region, we get,
IC=αIE=β1+βIE=6061×0.61×10−3
=0.6 mA
Now, the voltage at VC=−10+4.7×0.6=−7.18 V
Value of IB=ICβ=0.660×10−3=1×10−5A=10 μA
now, VB=IBRB
=10×10−6×50×105=0.5 V
∴VE=VB+VEB=0.5+0.7=1.2 V
VEC=1.2−(−7.18)=8.38 V
∴Power dissipated VEC×IC=8.38×0.6×10−3=5.028 mW