Diffusion current in a p-n junction is greater than the drift current in magnitude

if the junction is forward-biased

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if the junction is reverse-biased

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if the junction is unbiased

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in no case

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Solution

The correct option is A if the junction is forward-biased
In case of forward bias, the corresponding charge density on the two sides will increase as a result of which diffusion current will increase since it depends on the charge density. Drift current will be less as the junction charge density will be less and hence low electric field is present in opposite direction (due to positive external voltage).

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Similar questions

Q. Diffusion current in a p-n junction is greater than the drift current in magnitude
(a) if the junction is forward-biased
(b) if the junction is reverse-biased
(c) if the junction is unbiased
(d) in no case.

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Q. When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.

Q. When a p-n junction is reverse biased, the current becomes almost constant at

25 μ A

. When it is forward biased at

200 m e V

, a current of

75 μ A

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and (c) forward-biased at

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The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?

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