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Forward Bias

The diffusion...

Question

The diffusion current in a p-n junction is greater than the drift current when the junction is

A

forward biased.

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B

reverse biased.

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C

unbiased.

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D

both forward and reverse biased.

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Solution

The correct option is A forward biased.
Diffusion current is due to recombination of electrons and holes, while drift current is the influence of applied potential across the diode. When the electrons move towards positive terminal and holes move towards negative terminal, the recombination of carriers takes place and drift current decreases than diffusion current.

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Similar questions

Q. Diffusion current in a p-n junction is greater than the drift current in magnitude
(a) if the junction is forward-biased
(b) if the junction is reverse-biased
(c) if the junction is unbiased
(d) in no case.

Q. When a p-n junction is reverse biased, the current becomes almost constant at

25 μ A

. When it is forward biased at

200 m e V

75 μ A

is obtained. Find the magnitude of diffusion current when the diode is (a) unbiased (b) reverse-biased at

200 m V

and (c) forward-biased at

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Q. When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.

Q. Diffusion current in a p-n junction is greater than the drift current in magnitude

Q. The diffusion current in a p-n junction is
(a) from the n-side ot the p-side
(b) from the p-side to the n-side
(c) from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse-biased
(d) from the p-side to the n-side if the junction is forward and in the opposite direction if it is reverse-biased.

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