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Question

Estimate the proportion of boron impurity which will increase the conductivity of a pure silicon sample by a factor of 100. Assume that each boron atom creates a hole, and the concentration of holes in pure silicon at the same temperature is 7×1015 holes per cubic meter. Density of silicon is 5×1028 atoms per cubic meter.

A
1.8×105
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B
3.571×1010
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C
2.580×1010
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D
4.576×1010
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Solution

The correct option is B 3.571×1010
In a pure silicon, ne=nh,

Total number of charge carries initially
=2×7×1015=14×1015 m3

As the conductivity should be increased by a factor of 100,

Final total number of charge carries
=14×1015×100=14×1017 m3

Let x be the hole concentration after doping, which is also equal to boron concentration.

As the product of the concentrations of holes and conduction electrons remains almost the same.

So, (7×1015)×(7×1015)=x×(14×1017x)

14x×1017x2=49×1030

x214x×1017+49×1030=0

x=14×1017±142×10344×49×10302

x14×1017 m3

Thus, the proportion of boron impurity added is given by,

5×102814×1017=3.571×1010

Therefore, 1 boron atom is added for every 3.571×1010 atoms of silicon.

Hence, option (B) is correct.

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