The correct option is B 3.571×1010
In a pure silicon, ne=nh,
∴ Total number of charge carries initially
=2×7×1015=14×1015 m−3
As the conductivity should be increased by a factor of 100,
Final total number of charge carries
=14×1015×100=14×1017 m−3
Let x be the hole concentration after doping, which is also equal to boron concentration.
As the product of the concentrations of holes and conduction electrons remains almost the same.
So, (7×1015)×(7×1015)=x×(14×1017−x)
⇒14x×1017−x2=49×1030
⇒x2−14x×1017+49×1030=0
⇒x=14×1017±√142×1034−4×49×10302
⇒x≈14×1017 m−3
Thus, the proportion of boron impurity added is given by,
5×102814×1017=3.571×1010
Therefore, 1 boron atom is added for every 3.571×1010 atoms of silicon.
Hence, option (B) is correct.