(Explain with the help of a diagram, how a depletion layer and barrier potential are formed in a junction diode.
A depletion region forms instantaneously across a p-n junction. It is most easily described when the junction is in thermal equilibrium or in a steady state: in both of these cases the properties of the system do not vary in time; they have been called dynamic equilibrium. Electrons and holes diffuse into regions with lower concentrations of electrons and holes, much as ink diffuses into water until it is uniformly distributed. By definition, N-type semiconductor has an excess of free electrons compared to the P-type region, and P-type has an excess of holes compared to the N-type region. Therefore when N-doped and P-doped pieces of semiconductor are placed together to form a junction, electrons migrate into the P-side and holes migrate into the N-side. Departure of an electron from the N-side to the P-side leaves a positive donor ion behind on the N-side, and likewise the hole leaves a negative acceptor ion on the P-side. Following transfer, the diffused electrons come into contact with holes on the P-side and are eliminated by recombination. Likewise for the diffused holes on the N-side. The net result is the diffused electrons and holes are gone, leaving behind the charged ions adjacent to the interface in a region with no mobile carriers (called the depletion region).
A depletion region forms instantaneously across a p-n junction. It is most easily described when the junction is in thermal equilibrium or in a steady state: in both of these cases the properties of the system do not vary in time; they have been called dynamic equilibrium. Electrons and holes diffuse into regions with lower concentrations of electrons and holes, much as ink diffuses into water until it is uniformly distributed. By definition, N-type semiconductor has an excess of free electrons compared to the P-type region, and P-type has an excess of holes compared to the N-type region. Therefore when N-doped and P-doped pieces of semiconductor are placed together to form a junction, electrons migrate into the P-side and holes migrate into the N-side. Departure of an electron from the N-side to the P-side leaves a positive donor ion behind on the N-side, and likewise the hole leaves a negative acceptor ion on the P-side. Following transfer, the diffused electrons come into contact with holes on the P-side and are eliminated by recombination. Likewise for the diffused holes on the N-side. The net result is the diffused electrons and holes are gone, leaving behind the charged ions adjacent to the interface in a region with no mobile carriers (called the depletion region).
