Match the List-I with List-II:
List-I List-II
(a) Silicon doped with phosphorus (p) Acceptor level above valence bond
(b) Metal excess non-stoichiometry in NaCI (q) n-type semiconductor
(c) Ge doped with Ga (r) Donor level just below the conduction band
(d) Anion vacancy with trapped electron (s) F- centre

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Solution

$\begin{matrix} (a) \to (r) (b) \to (p) (c) \to (q) (d) \to (s) H e n c e, s o l v e d . \end{matrix}$

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Similar questions

List-1	List-2
A. Intrinsic semiconductor	E. Donor level
B. N-type semiconductor	F. Acceptor level
C. p-type semiconductor	G. Immobile ions
D. Depletion layer	H. Fermi energy levels is at the centre of forbidden energy gap I. Fermi energy level is near the conduction band

Which of the following statements are true about semiconductors ?

(a) Silicon doped with electron rich impurity is a p-type semiconductor

(b) Silicon doped with an electron rich impurity is an n-type semiconductor

(d) An electron vacancy increases the conductivity of n-type semiconductor

n -

Classify each of the following as being either a p-type or an n-type semiconductor:

(i) Ge doped with In (ii) B doped with Si.

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List-I	List-II
(a) Silicon doped with phosphorus	(p) Acceptor level above valence bond
(b) Metal excess non-stoichiometry in NaCI	(q) n-type semiconductor
(c) Ge doped with Ga	(r) Donor level just below the conduction band
(d) Anion vacancy with trapped electron	(s) F- centre