Potential barrier developed in a junction diode opposes:

minority charge carriers in both regions only

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majority carriers only

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electrons in n-region

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holes in p-region

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Solution

The correct option is B
majority carriers only

Potential barrier is developed at depletion region in such a way that it opposes the flow of majority carriers only.

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In a forward biased p – n junction diode, the potential barrier in the depletion region is of the form

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