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Question

The diffusion current in a p-n junction is greater than the drift current when the junction is

A
forward biased.
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B
reverse biased.
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C
unbiased.
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D
both forward and reverse biased.
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Solution

The correct option is A forward biased.
Diffusion current is due to recombination of electrons and holes, while drift current is the influence of applied potential across the diode. When the electrons move towards positive terminal and holes move towards negative terminal, the recombination of carriers takes place and drift current decreases than diffusion current.

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