Question

The dominant mechanisms for the motion of charge carriers in forward and reverse biased germanium p-n junctions are :

• A. diffusion in both forward and reverse bias
• B. diffusion in forward bias and drift in reverse bias
• C. drift in forward bias and diffusion in reverse bias
• D. drift in both forward and reverse bias

Answer 1

The correct option is B

diffusion in forward bias and drift in reverse bias

When a diode is forward biased, the barrier potential decreases and eventually becomes zero whereas in reverse biased the barrier potential keeps on increasing which restricts the flow of majority charge carriers. Hence, the dominant mechanism is diffusion in forward bias and drift in reverse bias.