The reverse biasing in a PN junction diode

Decreases the potential barrier

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Increases the potential barrier

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Increases the number of minority charge carriers

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Increases the number of majority charge carriers

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Solution

The correct option is B
Increases the potential barrier

In reverse biasing, width of depletion layer increases.

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Similar questions

When forward bias is applied to a p-n junction, then what happens to the potential barrier $V_{B}$ , and the width of charge depletion region?

When a forward bias is applied to a p-n junction, it

(a) raises the potential barrier.

(b) reduces the majority carrier current to zero.

(d) None of the above.

V

V_{o}

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