Question

The reverse saturation current of a silicon diode

• A. doubles for every ${10}^{o}C$ increase in temperature
• B. does not change with temperature
• C. halves for every $1^{o}C$ decrease in temperature
• D. increases by $1.5$ times for every $2^{o}C$ increment in temperature

Answer 1

The correct option is A doubles for every ${10}^{o}C$ increase in temperature

Reverse saturation current in p-n junction diode will be just double in magnitude for every ${10}^{o}C$ rise in temperature.

This is true because of the more energy gained by the minority carriers from what is called thermal voltage ($Vt$) by the heat energy dissipated at the junction

Higher heat=>> High voltage =>> More minority carriers =>> Higher reverse sat current