Question

When p-n junction diode is forward biased, then:

• A. the depletion region is reduced and barrier height is increased
• B. the depletion region is widened and barrier height is reduced
• C. both the depletion region and barrier height are reduced
• D. both the depletion region and barrier height are increased

Answer 1

The correct option is C both the depletion region and barrier height are reduced

In forward biasing, the p-type is connected with the positive terminal and the n-type is connected with negative terminal of the battery.Because of this, the holes in p-type region and the electrons in n-type region are pushed towards the junction which reduces the width of the depletion layer. Moreover the distance between the diffused holes and electrons decreases which results in decrease in electric field in depletion region. Hence the barrier potential decreases.