When p-n junction diode is forward biased

the depletion region is reduced and barrier height is increased

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the depletion region is widened and barrier height is reduced.

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both the depletion region and barrier height reduced

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both the depletion region and barrier height increased.

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Solution

The correct option is A the depletion region is reduced and barrier height is increased

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Similar questions

In a forward biased p – n junction diode, the potential barrier in the depletion region is of the form

p - n

W

V_{0}

When forward bias is applied to a p-n junction, then what happens to the potential barrier $V_{B}$ , and the width of charge depletion region?

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