Bipolar junction transistor is abbreviated as BJT.
It is a three-terminal semiconductor device in which both electrons and holes of electrons are used to carry out the charge.
It is a current controlled device.
Bipolar junction transistors (BJTs) are charge carriers that utilize both electrons and electron holes.
A bipolar transistor can control a considerably greater current flowing between its terminals with a little current injected at one of its terminals, making it capable of amplification or switching.
BJTs are made up of two junctions between two semiconductor kinds, n-type and p-type, which are areas inside a single crystal.
The junctions may be created in a variety of ways, including adjusting the doping of the semiconductor material as it grows, depositing metal pellets to generate alloy junctions, and diffusing n-type and p-type doping chemicals into the crystal.
Junction transistors swiftly supplanted point-contact transistors because of their improved predictability and performance. Diffused transistors, along with other components, are components of analog and digital integrated circuits.
Hundreds of bipolar junction transistors may be produced at a very low cost in a single circuit.