IC Full Form

What is the full form of IC?

The full form of IC is the Integrated Circuit. It is a small size electronic device constructed from semiconductor material which includes many microscopic elements, such as Diodes, Transistors. Resistors & Capacitors. All these elements are interconnected on a thin sheet of semiconductors and assembled as a single entity, generally silicone.

ICs are used in a wide range of devices, such as Television sets, microprocessors, automobiles, audio & video equipment and mobile devices and are often recognized as microchips or chips. It was designed mainly to accommodate as many transistors as possible on a semiconductor chip.

Types of Integrated circuits

Jack Kilby built the very first IC, or microchip, in 1958. Over the centuries, multiple innovations occurred, and ICs went through a series of development which made them encompass more number of transistors and other electronic components. According to the level of integration of electronic components, ICs can be classified as –

  • SSI (Small Scale Integration) – 1 to 100 transistors for every single IC or cube.
  • MSI (Medium Scale Integration) – 1000 to several hundred thousand transistors for every single IC or cube.
  • VLSI (Very Large Scale Integration) – 100 thousand to 1 million transistors for every single IC or cube.
  • ULSI (Ultra Large Scale Integration) – IC, including transistors of millions or billions per chip. E.g. processor for computers.

ICs are also classified as Analog IC, Digital IC or a blend of both.

Benefits of IC

  • The size of the IC is quite small, compared to the discrete circuit.
  • The weight of an IC is exceptionally low when compared to complete discrete circuits.
  • It is highly dependable.
  • Despite its smaller size, it has lower energy consumption.
  • It can easily be replaced in case of a problem.
  • Temperature variations among circuit elements are minor.
  • It is suitable for minimal signal operation.

Limitations of IC

  • It can only handle a limited quantity of electricity.
  • P-N-P High-Grade chamber is not possible.
  • It is strenuous to obtain the low-temperature coefficient effectively.
  • Potency dissipation is limited to 10 watts.
  • Low noise and high voltage operation aren’t easily attained.
  • It is difficult to repair, in case of any damage.

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