IC Full Form

What is the full form of IC?

The full form of IC is the Integrated Circuit. It is a small size electronic device constructed from semiconductor material which includes many microscopic elements, such as Diodes, Transistors. Resistors & Capacitors. All these elements are interconnected on a thin sheet of semiconductors and assembled as a single entity, generally silicone.

ICs are used in a wide range of devices, such as Television sets, microprocessors, automobiles, audio & video equipment and mobile devices and often recognized as a microchip or chip. It was designed mainly to the position as much as possible transistors on a semiconductor chip.

Types of Integrated circuits

Jack Kilby built the very first IC, or microchip, in 1958. There are many multiple centuries of innovations occurred via which ICs have gone through & through such repeated developments made ICs encompass extra transistors and other electronic components and as mentioned they can be classified as,

  • SSI (Small Scale Integration) – 1 to 100 transistors for every single IC or cube.
  • MSI (Medium Scale Integration) – 1000 to several hundred thousand transistors for every single IC or cube.
  • VLSI (Very Large Scale Integration) – 100 thousand to 1 million transistors for every single IC or cube.
  • ULSI (Ultra Large Scale Integration) – IC, including transistors of millions or billions every chip. E.g. processor for computers.

ICs are also classified as Analog IC, Digital IC or a blend of both.

Benefits of IC

  • The size of the IC is quite small, compared to the discrete circuit.
  • The weight of an IC is exceptionally low when compared to complete discrete circuits.
  • It is highly dependable.
  • Despite its smaller size, it has lower energy consumption.
  • It can easily be replaced in case of a problem, but it can hardly be fixed.
  • Temperature variations among circuit elements are minor.
  • It is suitable for minimal signal operation.

Limitations of IC

  • It can only handle a limited quantity of electricity.
  • P-N – P High-Grade chamber is not possible.
  • It is strenuous to obtain the low-temperature coefficient effectively.
  • Potency dissipation is limited to 10 watts.
  • Low noise and high voltage operation aren’t easily attained.

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